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Proceedings Paper

Double pre-wet RRC (reducing resist consumption) process for deep ultraviolet bottom antireflective coatings (BARC)
Author(s): Xiao Li; Warren Greene; Chris Bowker
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Paper Abstract

RRC (Reducing Resist Consumption) process is widely used in the Semiconductor industry to decrease the cost of photo resist per wafer. However, the process is often accompanied with various coating defects that make it difficult to improve final yield and further reduce resist cost per wafer. Deep ultraviolet (DUV) bottom anti-reflective coating is critical to critical dimension (CD) control and is used for most critical layers like Poly, STI and Contact layers. This paper will present a novel double pre-wet RRC process to reduce both coating defects and resist consumption of BARC. The relationship between resist consumption per coating and thickness uniformity (mean and range) of the new process was evaluated. The stability test results of the new process shows acceptable manufacturing results. Coating defects from double pre-wet RRC process were analyzed and compared with the normal coating process without RRC. The effect of DUV BARC coating performed by the double pre-wet RRC process on critical dimension (CD) performance of Island, Poly and Contact layer was also reported.

Paper Details

Date Published: 14 May 2004
PDF: 10 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534150
Show Author Affiliations
Xiao Li, LSI Logic Corp. (United States)
Warren Greene, LSI Logic Corp. (United States)
Chris Bowker, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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