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Proceedings Paper

Do we need complex resist models for predictive simulation of lithographic process performance?
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Paper Abstract

This paper describes different simplified simulation models which characterize the behavior of the photoresist during lithography processes. The effectiveness of these models is compared with the results of more physics and chemistry containing simulators. The strengths and weaknesses of the simplified models are demonstrated for practical applications. Simplified resist model parameters are calibrated for 193nm chemically amplified resists (CAR). The results are compared with calibration of full simulation models. The validity of the simulation models under different process conditions is investigated.

Paper Details

Date Published: 14 May 2004
PDF: 12 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534045
Show Author Affiliations
Bernd Tollkuhn, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnologie (Germany)
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (Germany)
Jeroen Lammers, Philips Research Leuven (Belgium)
Christoph Nolscher, Infineon Technologies AG (Germany)
Armin Semmler, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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