Share Email Print
cover

Proceedings Paper

Experimental study on basic properties of laser-produced EUV plasmas on GEKKO-XII laser facility
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Extremely ultraviolet (EUV) light at around 13.5 nm of wavelength is the most probable candidate of the light source for lithography for semiconductors of next generation. We have been studying about the EUV light source from laser-produced plasma. Detailed understanding of the EUV plasma is required for developments of modeling with simulation codes. Several parameters should be experimentally measured to develop the important issues in the simulation codes. We focused on density profile, properties of EUV emission, and opacity of the laser-produced plasmas. We present re-cent experimental results on these basic properties of the laser-produced EUV plasmas.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.533918
Show Author Affiliations
Keisuke Shigemori, Institute of Laser Engineering/Osaka Univ. (Japan)
Mitsuo Nakai, Institute of Laser Engineering/Osaka Univ. (Japan)
Yoshinori Shimada, Institute for Laser Technology (Japan)
Michiteru Yamaura, Institute for Laser Technology (Japan)
Kazuhisa Hashimoto, Institute for Laser Technology (Japan)
Shinsuke Fujioka, Institute of Laser Engineering/Osaka Univ. (Japan)
Hiroaki Nishimura, Institute of Laser Engineering/Osaka Univ. (Japan)
Shigeaki Uchida, Institute for Laser Technology (Japan)
Atsushi Sunahara, Institute for Laser Technology (Japan)
Katsunobu Nishihara, Institute of Laser Engineering/Osaka Univ. (Japan)
Noriaki Miyanaga, Institute of Laser Engineering/Osaka Univ. (Japan)
Yasukazu Izawa, Institute of Laser Engineering/Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

© SPIE. Terms of Use
Back to Top