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Proceedings Paper

Impact of BARC on SEM shrinkage of ArF resist
Author(s): Shi Yong Lee; Myungsun Kim; Sangwoong Yoon; Kyung-Mee Kim; Jae Hyun Kim; Hyun-Woo Kim; Sang-Gyun Woo; Young Ho Kim; Sang-Mun Chon; Takahiro Kishioka; Yasuhisa Sone; Yasuyuki Nakajima
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Paper Abstract

The shrinkage of resist pattern during in-line SEM measurement has been argued and studied as one of the problems unsettled for manufacturing with ArF photolithography. Many of attempts to solve this problem have focused their attentions on the improvement of resist and inspection equipment. We bring up BARC (bottom anti-reflective coating) as a new impact factor on SEM shrinkage of resist. Practically, although the same resist was employed, our shrinkage tests gave the results depending on the kind of BARC. Feature size and depth of focus also affect SEM shrinkage of resist. Effect of reflectivity on SEM shrinkage was evaluated by changing thickness of BARCs and resultantly was somewhat significant. In this paper, the BARC-dependent results of SEM shrinkage are analyzed and discussed to provide a possibility that BARC may have another function of reducing SEM shrinkage.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.533884
Show Author Affiliations
Shi Yong Lee, Samsung Electronics Co., Ltd. (South Korea)
Myungsun Kim, Samsung Electronics Co., Ltd. (South Korea)
Sangwoong Yoon, Samsung Electronics Co., Ltd. (South Korea)
Kyung-Mee Kim, Samsung Electronics Co., Ltd. (South Korea)
Jae Hyun Kim, Samsung Electronics Co., Ltd. (South Korea)
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Young Ho Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Mun Chon, Samsung Electronics Co., Ltd. (South Korea)
Takahiro Kishioka, Nissan Chemical Industries, Ltd. (Japan)
Yasuhisa Sone, Nissan Chemical Industries, Ltd. (Japan)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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