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Proceedings Paper

Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology
Author(s): Kevin R. Lensing; Clint Miller; Geoff Chudleigh; Bryan Swain; Michael Laughery; Anita Viswanathan
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Paper Abstract

A series of experiments were performed to determine if the ThermaWave INTEGRA CCDi reflectometer combined with Timbre Technologies’ Optical Digital Profiler (ODP) software could meet the requirements for lithography cell integration and process control of critical 0.13-micron Flash memory applications. Shallow Trench Isolation (STI), First Poly Gate, Stacked Gate and Aluminum Interconnect layers were examined as a part of this study. ODP models were developed for each of these applications and their output was compared to Critical Dimension Scanning Electron Microscopy (CDSEM) and cross-section SEM to demonstrate adequate correlation to incumbent metrology techniques. ODP is shown herein to correlate to CDSEM while providing the throughput required to measure every wafer without creating a bottleneck for the lithography cell. Experimental results also suggest that, in many cases, ODP can deliver profile determination beyond the fundamental capability of standard in-line metrology techniques.

Paper Details

Date Published: 24 May 2004
PDF: 10 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.533813
Show Author Affiliations
Kevin R. Lensing, FASL, LLC (United States)
Clint Miller, FASL, LLC (United States)
Geoff Chudleigh, FASL, LLC (United States)
Bryan Swain, Timbre Technologies, Inc. (United States)
Michael Laughery, Timbre Technologies, Inc. (United States)
Anita Viswanathan, Tokyo Electron America, Inc. (United States)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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