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Proceedings Paper

Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model
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Paper Abstract

Silica glass exposed to pulsed UV excimer laser irradiation undergoes optical changes that can include either an optical path increase or a decrease. During a given exposure the sign of the induced optical path change can reverse as a function of pulse count. The reduced optical path and sign reversal are only observed in H2-containing glasses, and at high exposure fluence only optical path increase is observed. In past work we proposed an induced density change model invoking a dynamic equilibrium density to explain the high fluence experiments. Here we present a model that extends the density model to the low fluence regime by allowing the equilibrium density to be a function of the time-dependent break-up of the silica network during exposure. The network break-up is tracked by calculation of the induced SiH concentration in the glass. The agreement of optical path change obtained from experimental data with that deduced from the kinetic approach covers a wide range of exposure fluence and molecular hydrogen concentration. Using the model one can predict the change in optical path that arises from the excimer laser exposure.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.533259
Show Author Affiliations
Douglas C. Allan, Corning Inc. (United States)
Roger J. Araujo, Corning Inc. (United States)
Charlene M. Smith, Corning Inc. (United States)
Nicholas F. Borrelli, Corning Inc. (United States)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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