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Proceedings Paper

New methodology for evaluating and quantifying reticle line end shortening
Author(s): Mark C Simmons; John V. Jensen; Robert Muller; Andrew M. Jost
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Paper Abstract

A more precise and accurate method of quantifying line end effects on binary photomasks becomes necessary as reticle features continue to decrease in size. A new methodology for measuring and evaluating line ends was developed. By performing multiple step-wise measurements across a single line end feature using a fixed-width region of interest, a simulated representation of the line end profile could be generated. A high n-order polynomial fit was then applied to the resultant data set and a minimum line end value was extrapolated. This methodology reduced the measurement error directly caused by the region-of-interest (ROI) placement and sizing while, at the same time, it improved the accuracy and precision of the measurement. The generated line end profiles may be further used for modeling, simulation, or characterization.

Paper Details

Date Published: 24 May 2004
PDF: 7 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.533194
Show Author Affiliations
Mark C Simmons, LSI Logic Corp. (United States)
John V. Jensen, LSI Logic Corp. (United States)
Robert Muller, LSI Logic Corp. (United States)
Andrew M. Jost, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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