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Proceedings Paper

Over 100-mW blue-violet laser diodes for Blu-ray Disc system
Author(s): Takeharu Asano; Motonubu Takeya; Takashi Mizuno; Shinro Ikeda; Yoshio Ohfuji; Tsuyoshi Fujimoto; Kenji Oikawa; Shu Goto; Toshihiro Hashizu; Keigo Aga; Masao Ikeda
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Paper Abstract

400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the ridge width was as narrow as 1.4 μm, was applied to realize the stable lateral-mode operation. A layer structure around the active layer was carefully designed so as to ensure a high COD level. The lasers have been operated stably for more than 500 h under 130-mW pulsed operation at 60°C. From ambient temperature dependence of the device lifetime, the empirical activation energy was estimated as 0.32 eV. These results indicate that this LD is suitable for next-generation Blu-ray Disc system.

Paper Details

Date Published: 11 May 2004
PDF: 9 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.533187
Show Author Affiliations
Takeharu Asano, Sony Corp. (Japan)
Motonubu Takeya, Sony Shiroishi Semiconductor, Inc. (Japan)
Takashi Mizuno, Sony Shiroishi Semiconductor, Inc. (Japan)
Shinro Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)
Yoshio Ohfuji, Sony Shiroishi Semiconductor, Inc. (Japan)
Tsuyoshi Fujimoto, Sony Shiroishi Semiconductor, Inc. (Japan)
Kenji Oikawa, Sony Shiroishi Semiconductor, Inc. (Japan)
Shu Goto, Sony Shiroishi Semiconductor, Inc. (Japan)
Toshihiro Hashizu, Sony Shiroishi Semiconductor, Inc. (Japan)
Keigo Aga, Sony Corp. (Japan)
Masao Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)


Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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