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Proceedings Paper

High-power blue-violet laser diode fabricated on a GaN substrate
Author(s): Masayuki Shono; Yasuhiko Nomura; Yasuyuki Bessho
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Paper Abstract

We have successfully fabricated blue-violet laser diodes, consisting of nitride-based semiconductors, with both high-power and low-noise characteristics on GaN substrates. These laser diodes have a ridge waveguide structure with a dielectric current blocking layer. By improving the crystal quality of the grown materials and optimizing the optical confinement in the device, a kink level as high as 250 mW has been achieved. Optimized optical confinement is also assumed to result in far field patterns without any additional peaks. In addition to this, since the threading dislocation density at the active layer below the ridge portion is reduced to less than 105cm-2, these laser diodes have been operating reliably for more than 1000 h with a light output power of 100 mW at 60°C under pulsed operation. We have also confirmed that these laser diodes have a noise level as low as -130 dB/Hz, which meets the requirement for practical use, for a light output power of 5 mW. These laser diodes are expected to enable dual layer recording in nextgeneration, large-capacity optical disc systems using blue-violet laser diodes.

Paper Details

Date Published: 11 May 2004
PDF: 6 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.533186
Show Author Affiliations
Masayuki Shono, SANYO Electric Co., Ltd. (Japan)
Yasuhiko Nomura, SANYO Electric Co., Ltd. (Japan)
Yasuyuki Bessho, SANYO Electric Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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