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Proceedings Paper

Alignment mark signal simulation system for the optimum mark feature selection
Author(s): Takashi Sato; Ayako Endo; Tatsuhiko Higashiki; Kazutaka Ishigo; Takuya Kono; Takashi Sakamoto; Yoshiyuki Shioyama; Satoshi Tanaka
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Paper Abstract

Recently the overlay accuracy has got seriously severe. For the accurate overlay, signal intensity and waveform from the topographical alignment mark has been examined by signal simulation. Actually these results have given good agreements with actual signal profiles, but it is difficult to select particular alignment marks in each mask level by the signal simulation. Even after mass production, many mark candidates leave in kerf area. To help the selection, we propose a mark TCAD system. It is a useful system for the mark selection with the signal simulation in advance. In our system, alignment mark signal can be very easily simulated after input of some process parameters and process of record (POR). The POR is read into the system and a process simulator makes stacked films on a wafer. Topographical marks are simulated from the stacked films and the resist pattern. The topographical marks are illuminated and reflected beams are produced. It is simulated how the reflected beams are imaged through inspection optics. We show two applications. This system is not only to predict and show a signal waveform, but also helpful to find optimum marks.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.532808
Show Author Affiliations
Takashi Sato, Toshiba Corp. (Japan)
Ayako Endo, Toshiba Corp. (Japan)
Tatsuhiko Higashiki, Toshiba Corp. (Japan)
Kazutaka Ishigo, Toshiba Corp. (Japan)
Takuya Kono, Toshiba Corp. (Japan)
Takashi Sakamoto, Toshiba Corp. (Japan)
Yoshiyuki Shioyama, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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