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Proceedings Paper

Tailoring the EL spectrum of the GaAlInP DBR LED by the one-dimensional GaAlAs/AlAs photonic band-gap structure
Author(s): Hao Wang; Changjun Liao; Guanghan Fan; Jiye Cai
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Paper Abstract

The GaAlAs/AlAs one-dimensional photonic band gap structure (1D-PBG) was proposed according to the transmission theory. This structure was utilized to tailor the EL spectrum of the commercial GaAlInP red double-heterojunction distributed Bragg reflector LED (DH DBR-LED), whose EL spectrum distributes from 620nm to 670nm (inspired at 120mA). The designed 1D PBG was employed to tailor the spectrum at the area from 620nm to 635nm, 640nm to 655nm, and 660nm to 670nm, left the windows at about 630nm, 640nm, 655nm, and 672nm. This 1D PBG was caped on the DBR-LED surface, and realized by MOCVD method. The EL spectrum of the sample has the illumination peak at 631nm, 640nm, 655nm and 672nm. The result is very consistent with the calculation. The spectrum of the LED was tailored according to the design. The influence of the 1D-PBG to the light emitting angle was studied too.

Paper Details

Date Published: 25 March 2004
PDF: 10 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.532749
Show Author Affiliations
Hao Wang, South China Normal Univ. (China)
Changjun Liao, South China Normal Univ. (China)
Guanghan Fan, South China Normal Univ. (China)
Jiye Cai, Jinan Univ. (China)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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