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Proceedings Paper

Lithography process window analysis with calibrated model
Author(s): Wenzhan Zhou; Jin Yu; James Lo; Johnson Liu
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Paper Abstract

As critical-dimension shrink below 0.13 μm, the SPC (Statistical Process Control) based on CD (Critical Dimension) control in lithography process becomes more difficult. Increasing requirements of a shrinking process window have called on the need for more accurate decision of process window center. However in practical fabrication, we found that systematic error introduced by metrology and/or resist process can significantly impact the process window analysis result. Especially, when the simple polynomial functions are used to fit the lithographic data from focus exposure matrix (FEM), the model will fit these systematic errors rather than filter them out. This will definitely impact the process window analysis and determination of the best process condition. In this paper, we proposed to use a calibrated first principle model to do process window analysis. With this method, the systematic metrology error can be filtered out efficiently and give a more reasonable window analysis result.

Paper Details

Date Published: 24 May 2004
PDF: 6 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.532719
Show Author Affiliations
Wenzhan Zhou, UMCi, Ltd. (Singapore)
Jin Yu, UMCi, Ltd. (Singapore)
James Lo, UMCi, Ltd. (Singapore)
Johnson Liu, UMCi, Ltd. (Singapore)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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