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Proceedings Paper

Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam
Author(s): Qing Fang Wang; L. P. Shi; Z. B. Wang; B. Lan; K. J. Yi; Ming Hui Hong; Tow Chong Chong
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Paper Abstract

Ultrafast phase transitions triggered by single femtosecond laser pulse in Ge1Sb2Te4 films were investigated. By proper control of the film thickness, ultrafast crystalline and amorphous phase transformations have been achieved in Ge1Sb2Te4 films. These utlrafast phase transitions were confirmed by reflectivity change and x-ray diffraction measurement.

Paper Details

Date Published: 16 September 2003
PDF: 8 pages
Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); doi: 10.1117/12.532649
Show Author Affiliations
Qing Fang Wang, National Univ. of Singapore (Singapore)
Data Storage Institute (Singapore)
L. P. Shi, Data Storage Institute (Singapore)
Z. B. Wang, Data Storage Institute (Singapore)
B. Lan, Data Storage Institute (Singapore)
K. J. Yi, Data Storage Institute (Singapore)
Ming Hui Hong, Data Storage Institute (Singapore)
Tow Chong Chong, National Univ. of Singapore (Singapore)
Data Storage Institute (Singapore)

Published in SPIE Proceedings Vol. 5069:
Optical Data Storage 2003
Michael O'Neill; Naoyasu Miyagawa, Editor(s)

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