Share Email Print

Proceedings Paper

A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage
Author(s): Semih Senkader; M. M. Aziz; Christopher David Wright
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have developed a model to simulate the phase-change behavior of GeSbTe thin film alloys. Based on classical nucleation theory we described formation of crystalline clusters using chemical rate equations. Assuming that the phase-change proceeds by interactions of single GeSbTe molecules with growing or decaying crystalline clusters we used a set of differential equations to account for the population density changes of clusters. We defined reaction rates encountered in model equations by considering possible molecular processes during the phase-change process. To validate the model we simulated experiments taken from the literature. It can predict the kinetics of crystallization well, describe transient effectis correctly, and consider influecnes of substrates on crystallization successfully.

Paper Details

Date Published: 16 September 2003
PDF: 7 pages
Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); doi: 10.1117/12.532526
Show Author Affiliations
Semih Senkader, Univ. of Exeter (United Kingdom)
M. M. Aziz, Univ. of Exeter (United Kingdom)
Christopher David Wright, Univ. of Exeter (United Kingdom)

Published in SPIE Proceedings Vol. 5069:
Optical Data Storage 2003
Michael O'Neill; Naoyasu Miyagawa, Editor(s)

© SPIE. Terms of Use
Back to Top