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Proceedings Paper

The study of crystallization process of as-deposited amorphous phase change-materials by in situ annealing experiments
Author(s): Zhaohui Fan; Lisha Wang; Yingguo Peng; Noel T. Nuhfer; David E. Laughlin; U. Rambabu; Han-Ping D. Shieh
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Paper Abstract

The crystallization process of two types of phase change materials (Ge2Sb2Te5 and AgInSbTe) has been studied by in-situ annealing experiments in the column of a transmission electron microscope. Under the same heating rate (7.5K/s), the Ge2Sb2Te5 material starts to nucleate at 170°C, while AgInSbTe starts to nucleate at 250°C. The measured nucleation rate of Ge2Sb2Te5 is 8.2×1014 cm-3s-1 larger than nucleation is dominant for both Ge2Sb2Te5 and AgInSbTe with ZnS-SiO2 as the dielectric layer in the thinned samples.

Paper Details

Date Published: 16 September 2003
PDF: 7 pages
Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); doi: 10.1117/12.532407
Show Author Affiliations
Zhaohui Fan, Carnegie Mellon Univ. (United States)
Lisha Wang, Carnegie Mellon Univ. (United States)
Yingguo Peng, Carnegie Mellon Univ. (United States)
Noel T. Nuhfer, Carnegie Mellon Univ. (United States)
David E. Laughlin, Carnegie Mellon Univ. (United States)
U. Rambabu, National Chiao-Tung Univ. (Taiwan)
Han-Ping D. Shieh, National Chiao-Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5069:
Optical Data Storage 2003

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