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Proceedings Paper

365-nm ultraviolet-light-emitting diodes with an output power of over 400 mW
Author(s): Daisuke Morita; Masahiko Sano; Masashi Yamamoto; Kousuke Matoba; Katsuhiro Yasutomo; Kazuyuki Akaishi; Yoshio Kasai; Shin-Ichi Nagahama; Takashi Mukai
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Paper Abstract

We fabricated high power ultraviolet (UV) light emitting diodes (LEDs), whose emission wavelength is around 365 nm. We found that, in order to improve the external quantum efficiency (ηex) of UV LEDs, it is very important to reduce the optical self-absorption and the threading dislocation density (TDD) of epi-layers. Therefore, at first, UV LEDs epi-layers were grown on high-quality GaN templates (TDD = 2x 108/cm2) with sapphire substrates, and then the GaN templates and the sapphire substrates were removed by using laser-induced lift-off and polishing techniques. As a result, we obtained the low self-absorption and low TDD UV LEDs. When this UV LED was operated at a forward-bias pulsed current of 500 mA at room temperature (RT), the peak wavelength, the output power (Po), the forward voltage (Vf) and the ηex were 365 nm, 410 mW, 5.3 V, 24%, respectively. Moreover, at a forward-bias direct current of 500 mA at RT, Po, Vf and ηex were 360 mW, 5.0 V, 21%, respectively.

Paper Details

Date Published: 6 July 2004
PDF: 7 pages
Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.532240
Show Author Affiliations
Daisuke Morita, Nichia Corp. (Japan)
Masahiko Sano, Nichia Corp. (Japan)
Masashi Yamamoto, Nichia Corp. (Japan)
Kousuke Matoba, Nichia Corp. (Japan)
Katsuhiro Yasutomo, Nichia Corp. (Japan)
Kazuyuki Akaishi, Nichia Corp. (Japan)
Yoshio Kasai, Nichia Corp. (Japan)
Shin-Ichi Nagahama, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)


Published in SPIE Proceedings Vol. 5359:
Quantum Sensing and Nanophotonic Devices
Manijeh Razeghi; Gail J. Brown, Editor(s)

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