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Proceedings Paper

InGaAs resonant-cavity light-emitting diodes (RC LEDs)
Author(s): Jan Muszalski; Maciej Bugajski; T. J. Ochalski; Bohdan Mroziewicz; Hanna Wrzesinska; Marianna Gorska; J. Katcki
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Paper Abstract

We have developed resonant-cavity light emitting diodes (RC LED) with very good emission characteristics. RC LEDs proved to be more tolerant to the epitaxial growth parameters and device fabrication procedures. As relatively robust devices they are less sensitive to typical for VCSEL manufacturing challenges and seem to have great potential for applications. Comparing to classical LED the spectrum of RC LED is concentrated into a narrow line with less than 2 nm halfwidth. The RC LED spectrum is determined mainly by the cavity resonance; its width decreases with the increase of the cavity finesse and the intensity increase reflect the on axis cavity enhancement. Additional, favorable RC LED property is its emission characteristic directionality which depends on the tuning between QW emission and cavity resonance. We have optimized the series resistance of diodes. The best results have been obtained for digital alloy graded distributed Bragg reflector (DRB) interfaces. The MBE grown structures were tested extensively prior to the device fabrication by reflectivity and photoluminescence. The assembled diodes were subjected to electrical and optical tests. Generally we have found very good correlation between the results of optical test (PL maps) on as grown wafers and probe tests on final devices.

Paper Details

Date Published: 6 October 2003
PDF: 10 pages
Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531927
Show Author Affiliations
Jan Muszalski, Institute of Electron Technology (Poland)
Maciej Bugajski, Institute of Electron Technology (Poland)
T. J. Ochalski, Institute of Electron Technology (Poland)
Bohdan Mroziewicz, Institute of Electron Technology (Poland)
Hanna Wrzesinska, Institute of Electron Technology (Poland)
Marianna Gorska, Institute of Electron Technology (Poland)
J. Katcki, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 5230:
Laser Technology VII: Progress in Lasers

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