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Proceedings Paper

Semiconductor lasers with strain superposition in active layer
Author(s): Andrzej Malag
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Paper Abstract

This work presents the possibility of modification of semiconductor laser characteristics by a superposition of stresses introduced during technological process. A short description of the most often introduced stress mechanisms and their theoretically expected influence on laser diode emission characteristics are outlined. Experimental results of combination of stress (or strain) mechanisms introduced both by a MOVE growth of lattice-mismatched GaAsP active layer in AlGaAs heterostructure and by H+ and He+ implantation used for stripe definition are presented. It has been shown that He+ implantation-induced strain can be considerably stronger with respect to lattice-mismatch originated strain then it has been evaluated so far in literature, giving possibilities of new solutions in optoelectronics design.

Paper Details

Date Published: 6 October 2003
PDF: 8 pages
Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531924
Show Author Affiliations
Andrzej Malag, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 5230:
Laser Technology VII: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz; Ryszard S. Romaniuk, Editor(s)

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