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Proceedings Paper

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input
Author(s): Daeik D Kim; Mikkel A Thomas; Martin A. Brooke; Nan Marie Jokerst
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Paper Abstract

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

Paper Details

Date Published: 8 June 2004
PDF: 9 pages
Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.531682
Show Author Affiliations
Daeik D Kim, Georgia Institute of Technology (United States)
Mikkel A Thomas, Georgia Institute of Technology (United States)
Martin A. Brooke, Duke Univ. (United States)
Nan Marie Jokerst, Duke Univ. (United States)


Published in SPIE Proceedings Vol. 5353:
Semiconductor Photodetectors
Kurt J. Linden; Eustace L. Dereniak, Editor(s)

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