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Proceedings Paper

Fabrication of large-area x-rays masks for UDXRL on beryllium using thin film UV lithography and x-ray backside exposure
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Paper Abstract

A method to fabricate a high precision X-ray mask for Ultra Deep X-ray Lithography (UDXRL) is presented in this paper by use of a single substrate. Firstly, an 8-μm layer of positive photoresist is patterned on a 500 μm thick beryllium substrate by use of UV lithography and 5 μm gold is electroplated out of a sulfite based commercial plating solution. Secondly, the photoresist is removed and 15 μm of SU-8 is spincoated and baked. The layer of SU-8 is patterned by use of an exposure from the backside of the substrate with a soft X-ray source, followed by post-exposure bake and development. An additional 5 μm layer of gold is electroplated on top of the first gold pattern thereby increasing the total thickness of the absorber on the X-ray mask to 10 μm. After the removal of the SU-8 resist, the second step of the process is repeated by use of a thicker layer of SU-8 (up to 100 μm) to obtain the high-precision and high-aspect ratio absorber pattern. Using this method, the maximum dimensional error of the fabricated gold pattern remains under 1 μm, while the smallest absorber feature size is 10 μm.

Paper Details

Date Published: 30 December 2003
PDF: 9 pages
Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); doi: 10.1117/12.531598
Show Author Affiliations
Josef Kouba, Louisiana State Univ. (United States)
Zhong-Geng Ling, Louisiana State Univ. (United States)
Lin Wang, Louisiana State Univ. (United States)
Yohannes M. Desta, Louisiana State Univ. (United States)
Jost Goettert, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 5342:
Micromachining and Microfabrication Process Technology IX
Mary Ann Maher; Jerome F. Jakubczak, Editor(s)

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