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Proceedings Paper

Adaptive CdTe:V photo-EMF detectors for laser ultrasonic detection
Author(s): Serguei I. Stepanov; Ponciano Rodriguez-Montero; Juan Castillo Mixcoatl; Sudhir B. Trivedi; Chen Chia Wang
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Paper Abstract

Preliminary results on utilization of CdTe:V photo-EMF detectors for broad-band (≈ 10 MHz) adaptive detection of optical phase modulation, which is necessary for laser ultrasonic applications, are reported. Unlike widely used GaAs photo-EMF detectors, devices under consideration demonstrate no remarkable electron-hole competition and ensure sensitivity necessary for detection of ≈ 2 nm surface displacement for 0.1 mW of signal beam power in simple transverse configuration without utilization of asymmetric interdigitated surface contacts. For the wavelength used (λ = 851 nm) dielectric cut-off frequency of typical CdTe:V detector was around 1 MHz, which, in principle allows us monitoring of as-processed objects moving with in-plane velocity up to 10 m/s.

Paper Details

Date Published: 19 November 2003
PDF: 2 pages
Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.530942
Show Author Affiliations
Serguei I. Stepanov, Instituto Nacional de Astrofisica Optica y Electro (Mexico)
Ponciano Rodriguez-Montero, Instituto Nacional de Astrofisica Optica y Electro (Mexico)
Juan Castillo Mixcoatl, Instituto Nacional de Astrofisica Optica y Electro (Mexico)
Sudhir B. Trivedi, Brimrose Corp. of America (United States)
Chen Chia Wang, Brimrose Corp. of America (United States)


Published in SPIE Proceedings Vol. 4829:
19th Congress of the International Commission for Optics: Optics for the Quality of Life
Giancarlo C. Righini; Anna Consortini, Editor(s)

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