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Proceedings Paper

Optical characterization of ZnSe thin films
Author(s): Daniel Franta; Ivan Ohlidal; Petr Klapetek; Alberto Montaigne-Ramil; Alberta Bonanni; David Stifter; Helmut Sitter
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Paper Abstract

In this paper the optical method based on multisample modification variable angle spectroscopic ellipsometry (VASE) is used to characterize thin films of ZnSe prepared by molecular beam epitaxy onto GaAs single crystal substrates. It is found that this method can be employed for determining the spectral dependences of the optical constants and values of the thicknesses of the films mentioned. Moreover, it is shown that using this method the RMS values of the heights and the values of the correlation length characterizing roughness irregularities of the upper boundaries of the films can be determined as well. The application of the method is illustrated by means of characterizing six samples of the ZnSe-films exhibiting different values of the thicknesses.

Paper Details

Date Published: 19 November 2003
PDF: 2 pages
Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.530775
Show Author Affiliations
Daniel Franta, Masaryk Univ. (Czech Republic)
Ivan Ohlidal, Masaryk Univ. (Czech Republic)
Petr Klapetek, Masaryk Univ. (Czech Republic)
Czech Metrology Institute (Czech Republic)
Alberto Montaigne-Ramil, Johannes Kepler Univ. (Austria)
Alberta Bonanni, Johannes Kepler Univ. (Austria)
David Stifter, Johannes Kepler Univ. (Austria)
Helmut Sitter, Johannes Kepler Univ. (Austria)


Published in SPIE Proceedings Vol. 4829:
19th Congress of the International Commission for Optics: Optics for the Quality of Life
Giancarlo C. Righini; Anna Consortini, Editor(s)

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