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Proceedings Paper

The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric
Author(s): K. N. Narayanan Unni; Remi de Bettignies; Sylvie Dabos-Seignon; Jean-Michel Nunzi
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Paper Abstract

The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

Paper Details

Date Published: 18 June 2004
PDF: 7 pages
Proc. SPIE 5351, Organic Photonic Materials and Devices VI, (18 June 2004); doi: 10.1117/12.530655
Show Author Affiliations
K. N. Narayanan Unni, Lab. POMA/CNRS, Univ. d'Angers (France)
Remi de Bettignies, Lab. POMA/CNRS, Univ. d'Angers (France)
Sylvie Dabos-Seignon, Lab. POMA/CNRS, Univ. d'Angers (France)
Jean-Michel Nunzi, Lab. POMA/CNRS, Univ. d'Angers (France)


Published in SPIE Proceedings Vol. 5351:
Organic Photonic Materials and Devices VI
James G. Grote; Toshikuni Kaino, Editor(s)

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