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Proceedings Paper

Superluminescent diode at 1.55 um with a bent absorbing guide structure
Author(s): Jeong-Ho Kim; Se-Kyung An; Dong-Won Kim; Jae-Hwan You; In-Sik Jung; Mi-Suk Choi; Young-Kyu Choi; Tchang-Hee Hong
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Paper Abstract

An InGaAsP/InP superluminescent diode (SLD) emitting at 1.55 um has been fabricated by the metal organic vapor deposition (MOCVD) and liquid phase epitaxy (LPE) equipments. Lasing is effectively suppressed by incorporating a bent absorbing guide structure for SLD operation. The fabricated SLD has an optical power of 4mW at an injection current of 200 mA. The spectral width of the SLD is 40 nm at the same current.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); doi: 10.1117/12.530626
Show Author Affiliations
Jeong-Ho Kim, Korea Maritime Univ. (South Korea)
Se-Kyung An, Korea Maritime Univ. (South Korea)
Dong-Won Kim, Korea Maritime Univ. (South Korea)
Jae-Hwan You, Korea Maritime Univ. (South Korea)
In-Sik Jung, Korea Maritime Univ. (South Korea)
Mi-Suk Choi, Korea Maritime Univ. (South Korea)
Young-Kyu Choi, Silla Univ. (South Korea)
Tchang-Hee Hong, Korea Maritime Univ. (South Korea)


Published in SPIE Proceedings Vol. 5355:
Integrated Optics: Devices, Materials, and Technologies VIII
Yakov Sidorin; Ari Tervonen, Editor(s)

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