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Proceedings Paper

Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells
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Paper Abstract

We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k • p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm-1. We also studied effects of doping on differential gain.

Paper Details

Date Published: 11 May 2004
PDF: 8 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.530465
Show Author Affiliations
Konstantin I. Kolokolov, NASA Ames Research Ctr. (United States)
Cun-Zheng Ning, NASA Ames Research Ctr. (United States)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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