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Proceedings Paper

Electron-beam assisted resist sidewall angle control and its applications
Author(s): Jei-Wei Chang; Chao-Peng Chen
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Paper Abstract

Conventional lift-off process uses dual-layer resists for transferring image into the substrate (top layer) and releasing the deposit (bottom layer). However, as the critical dimension of top layer approaches sub-100 nm, the undercut of bottom layer for subsequent lift-off process becomes very difficult to control. An alternative approach is to use single-layer resist to do lift-off. Such a process requires resist patterns with a negative-slope sidewall angle, which is not easily achieved by the optical lithographic tools. In this communication, we presented a lift-off method using a tilted electron beam and further development to produce sub-100 nm features with a negative-slope sidewall angle. This process was demonstrated in a negative-tone chemically amplified resist (NEB22A2) by using an exposure electron-beam system (Hitachi-900D). The computations, based on Monte Carlo simulations, were found to be in good agreement with the experimental results. Two extensive applications for recording heads were also presented.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.530381
Show Author Affiliations
Jei-Wei Chang, Headway Technologies, Inc. (United States)
Chao-Peng Chen, Headway Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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