Share Email Print

Proceedings Paper

ICP etching of InP and its applications in photonic circuits
Author(s): Fouad Karouta; Yucai C. Zhu; Erik Jan Geluk; Jos J. G. M. van der Tol; J. J. M. Binsma; Meint K. Smit
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Ridge waveguides with smooth and vertical sidewalls are essential in photonic circuits. We have investigated waveguide realization with reactive ion etching of InP and InP-based structures using a SiNx in a Cl2/H2/CH4 chemistry in an ICP plasma. Depending on ICP power and RF power, etching rates can be obtained from 200 nm/min up to > 2μm/min. A maximum etching selectivity of InP vs SiNx of 12 was obtained at 2000 W of ICP power. Deep etched waveguides, fabricated in an InP/InGaAsP double heterostructure, show typical losses of 2 dB/cm. This low value shows the potential of ICP technique in the fabrication of photonic circuits.

Paper Details

Date Published: 25 March 2004
PDF: 7 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.530339
Show Author Affiliations
Fouad Karouta, Technische Univ. Eindhoven (Netherlands)
Yucai C. Zhu, Technische Univ. Eindhoven (Netherlands)
Erik Jan Geluk, Technische Univ. Eindhoven (Netherlands)
Jos J. G. M. van der Tol, Technische Univ. Eindhoven (Netherlands)
J. J. M. Binsma, JDS Uniphase Corp. (Netherlands)
Meint K. Smit, Technische Univ. Eindhoven (Netherlands)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

© SPIE. Terms of Use
Back to Top