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Proceedings Paper

Highly efficient UV-based conversion LEDs for the generation of saturated colors with improved eye safety
Author(s): Bert Braune; Herbert Brunner
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Paper Abstract

Recently near UV conversion LEDs with an excitation wavelength of around 400nm have attracted increasing interest due to their high efficiency and output power. Favorably is also the great variety of efficient phosphors available for near UV excitation. For the generation of saturated colors this method is very efficient especially for dominant wavelengths from 480 nm to 570 nm. Direct light emission from InGaN chips show a strong temperature and current dependency increasing with the emission wavelength and may cause disturbing color shifts in applications. For the wavelength range between 530 nm to 570 nm the physical limitations of the InGaN system are reached and the efficiency of the InGaAlP system is not yet satisfying. Conversion LED's based on near UV-light emitting chips provide solutions for both problems. But up to now a disadvantage of these LEDs is the residual near UV-light emission which could lead to severe eye damages over time. OSRAM OS developed a eye safe solution by avoiding the near UV-peak while maintaining the high luminous efficiency. A luminous efficiency of 28 lm/W for λdom of approx. 560 nm was demonstrated, a value more than ten times higher than the efficiency of green emitting InGaAlP diodes. For these LEDs no more restrictions because of eye safety regulations are expected.

Paper Details

Date Published: 21 June 2004
PDF: 12 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.530295
Show Author Affiliations
Bert Braune, OSRAM Opto Semiconductors GmbH (Germany)
Herbert Brunner, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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