Share Email Print
cover

Proceedings Paper

Benefits of quantum well intermixing in high power diode lasers
Author(s): Stephen P. Najda; Gianluca Bacchin; Bocang Qiu; Xuefeng Liu; Olek P. Kowalski; Mark Silver; Stewart D. McDougall; Craig J. Hamilton; John H. Marsh
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.

Paper Details

Date Published: 11 May 2004
PDF: 13 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.530263
Show Author Affiliations
Stephen P. Najda, Intense Photonics Ltd. (United Kingdom)
Gianluca Bacchin, Intense Photonics Ltd. (United Kingdom)
Bocang Qiu, Intense Photonics Ltd. (United Kingdom)
Xuefeng Liu, Intense Photonics Ltd. (United Kingdom)
Olek P. Kowalski, Intense Photonics Ltd. (United Kingdom)
Mark Silver, Intense Photonics Ltd. (United Kingdom)
Stewart D. McDougall, Intense Photonics Ltd. (United Kingdom)
Craig J. Hamilton, Intense Photonics Ltd. (United Kingdom)
John H. Marsh, Intense Photonics Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

© SPIE. Terms of Use
Back to Top