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Proceedings Paper

High speed, lateral PIN photodiodes in silicon technologies
Author(s): Jeremy D. Schaub; Steven J. Koester; Gabriel Dehlinger; Q. Christine Ouyang; Drew Guckenberger; Min Yang; Dennis L. Rogers; Jack Chu; Alfred Grill
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Paper Abstract

High speed, efficient photodetectors are difficult to fabricate in standard silicon fabrication processes due to the long absorption length of silicon. However, high performance servers will soon require dense optical interconnects with low cost and high reliability, and this trend favors monolithic silicon receivers over hybrid counterparts. Recently, lateral PIN photodiode structures have been demonstrated in silicon CMOS technology with little or no process modifications. Optical receivers based on these detectors have achieved record performance in terms of speed and sensitivity. This paper will discuss the advantages, issues and recent advances in silicon-based photodetectors and optical receivers. This includes the fastest photodetector ever implemented in a standard bulk CMOS process, a 13.9 Gb/s lateral trench detector implemented in a modified EDRAM process, and a >15 GHz pure germanium photodiode grown directly on a silicon substrate.

Paper Details

Date Published: 8 June 2004
PDF: 11 pages
Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.530237
Show Author Affiliations
Jeremy D. Schaub, IBM Thomas J. Watson Research Ctr. (United States)
Steven J. Koester, IBM Thomas J. Watson Research Ctr. (United States)
Gabriel Dehlinger, IBM Thomas J. Watson Research Ctr. (United States)
Q. Christine Ouyang, IBM Thomas J. Watson Research Ctr. (United States)
Drew Guckenberger, Cornell Broadband Communications Research Lab. (United States)
Min Yang, IBM Thomas J. Watson Research Ctr. (United States)
Dennis L. Rogers, IBM Thomas J. Watson Research Ctr. (United States)
Jack Chu, IBM Thomas J. Watson Research Ctr. (United States)
Alfred Grill, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5353:
Semiconductor Photodetectors
Kurt J. Linden; Eustace L. Dereniak, Editor(s)

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