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Proceedings Paper

InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source
Author(s): PingJuan Niu; Haiyang Hu; Xunzhong Shang; Shudong Wu; Weilian Guo; Chang-yun Miao; Xiaoyun Li; Zhe Xu; Dan Qu
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Paper Abstract

Lattice-matched InGaP on GaAs substrate was successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. 0.5um-thick InGaP epilayer shows photoluminescence (PL) peak energy as large as 1.962eV, PL FWHM as small as 9.4meV, X-ray diffraction (XRD) rocking curve line-width as narrow as 25arcsec. The electron mobility of undoped, Si-doped InGaP layers measured by Hall are comparable to similar InGaP/GaAs heterojunction grown by SSMBE with other source or other growth techniques. Then the InGaP/GaAs HBT epiwafer is grown by this way. Beryllium(Be) diffusion is reduced by increasing the As/Ga flux ratio. Heterojuction Bipolar Transistor (HBT) with 75×75um2 emitter mesa area fabricated using this structure yielded an excellent performance with high current gain. The results reveal that InGaP/GaAs heterojunction grown by the present growth way have great potential application for semiconductor devices.

Paper Details

Date Published: 30 March 2004
PDF: 7 pages
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.530182
Show Author Affiliations
PingJuan Niu, Tianjin Polytechnic Univ. (China)
Haiyang Hu, Tianjin Polytechnic Univ. (China)
Xunzhong Shang, Institute of Physics (China)
Shudong Wu, Institute of Physics (China)
Weilian Guo, Tianjin Univ. (China)
Chang-yun Miao, Tianjin Polytechnic Univ. (China)
Xiaoyun Li, Tianjin Polytechnic Univ. (China)
Zhe Xu, Tianjin Polytechnic Univ. (China)
Dan Qu, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

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