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Proceedings Paper

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
Author(s): Y. S. Chang; Hao-chung Kuo; Fang-I Lai; Y. A. Chang; Li-Hong Laih; S. C. Wang
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Paper Abstract

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ~0.4 mA, and slope efficiencies ~ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ~30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

Paper Details

Date Published: 16 June 2004
PDF: 6 pages
Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.530055
Show Author Affiliations
Y. S. Chang, National Chiao Tung Univ. (Taiwan)
Hao-chung Kuo, National Chiao Tung Univ. (Taiwan)
Fang-I Lai, National Chiao Tung Univ. (Taiwan)
Y. A. Chang, National Chiao Tung Univ. (Taiwan)
Li-Hong Laih, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5364:
Vertical-Cavity Surface-Emitting Lasers VIII
Chun Lei; Kent D. Choquette; Sean P. Kilcoyne, Editor(s)

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