Share Email Print
cover

Proceedings Paper

Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Lithographic exposures belong to the most critical process steps in the manufacturing of microelectronic circuits. Almost all exposures are performed over nonplanar wafers. The backscattering of light from topographic features on these wafers is of increasing concern for the accuracy and stability of lithographic processes. We combine standard imaging theory and finite-difference time-domain (FDTD) algorithms to simulate several typical geometries. Consequences with respect to typical lithographic process parameters are discussed.

Paper Details

Date Published: 19 November 2003
PDF: 2 pages
Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.530047
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institute fur Integrierte Sys/Bauelemen (Germany)
Christian K. Kalus, SIGMA-C GmbH Software (Germany)


Published in SPIE Proceedings Vol. 4829:
19th Congress of the International Commission for Optics: Optics for the Quality of Life
Giancarlo C. Righini; Anna Consortini, Editor(s)

© SPIE. Terms of Use
Back to Top