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Proceedings Paper

Charging/discharging induced premature breakdown/recovery in Si nanocrystals embedded in SiO2 matrix
Author(s): Chi Yung Ng; Yang Liu; Tu Pei Chen; Man Siu Tse
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Paper Abstract

In this work, we have found that the charging of nc-Si in a thin gate oxide can induce a reduction in the total gate oxide capacitance. The capacitance can approach zero value if all the nanocrystals are charged up. The reduction of the gate oxide capacitance is attributed to the premature breakdown in the gate oxide due to the charging up in the nanocrystals, as the reduction of the gate oxide capacitance corresponds to a large decrease in the gate oxide leakage current. Here the breakdown caused by the charging in the nanocrystals is somewhat similar to the soft or hard breakdown in pure SiO2 thin films that are related to the charge trapping in the oxide film. The breakdown caused by the charging in the nanocrystals is found to be fully recoverable under ultra-violet (UV) light illumination for 5 minutes and a thermal annealing at temperature of 100°C for 10 minutes. The reduction and recovery of the capacitance due to the charging and discharging in the nanocrystals is explained with an equivalent circuit model.

Paper Details

Date Published: 29 March 2004
PDF: 6 pages
Proc. SPIE 5275, BioMEMS and Nanotechnology, (29 March 2004); doi: 10.1117/12.529973
Show Author Affiliations
Chi Yung Ng, Nanyang Technological Univ. (Singapore)
Yang Liu, Nanyang Technological Univ. (Singapore)
Tu Pei Chen, Nanyang Technological Univ. (Singapore)
Man Siu Tse, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 5275:
BioMEMS and Nanotechnology
Dan V. Nicolau; Uwe R. Muller; John M. Dell, Editor(s)

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