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Proceedings Paper

Application of combinatorial material chip method on the improvement of quantum dots emission efficiency
Author(s): Wei Lu; Y. L. Ji; H. X. Si; Shuechu Shen; Q. X. Zhao; Magnus Willander
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Paper Abstract

The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.

Paper Details

Date Published: 25 March 2004
PDF: 10 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.529967
Show Author Affiliations
Wei Lu, Shanghai Institute of Technical Physics (China)
Y. L. Ji, Shanghai Institute of Technical Physics (China)
H. X. Si, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)
Q. X. Zhao, Chalmers Univ. of Technology (Sweden)
Magnus Willander, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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