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Proceedings Paper

Near-field laser-assisted localized crystal growth and nanodeposition
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Paper Abstract

The ability to integrate nano-components onto MEMS devices in a controlled manner has been a limiting problem in interfacing micro-nano technologies, for the current methods of growing nano-structures/wires are inflexible and cannot be supported as a post-processing step for on-chip microelectronics. The main objective of this work is to selectively induce nucleation and further achieve crystal growth of silicon nano-structures/wires at specified sites without contaminating the outlining regions. A method utilizing a Q-switched, 532 nm, 10 Hz, Nd:YAG laser coupled to cantilevered NSOM fiber probes is proposed in this deposition experiment. A finite difference time domain simulation result is offered to illustrate the spatial confinement of the laser transmission field intensity emanating from the tip aperture. A vapor phase silane mixture (1% silane, 99% helium) was introduced into the vacuum chamber at pressures ranging from 200 to 440 Torr during the deposition experiments. The deposition and growth results for silicon nano-structure/wires on silicon substrates will be presented.

Paper Details

Date Published: 15 July 2004
PDF: 9 pages
Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); doi: 10.1117/12.529784
Show Author Affiliations
Anargyros L. Panayotopoulos, Univ. of California/Berkeley (United States)
Costas P. Grigoropoulos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 5339:
Photon Processing in Microelectronics and Photonics III
Jan J. Dubowski; Peter R. Herman; Friedrich G. Bachmann; Willem Hoving; Jim Fieret; David B. Geohegan; Frank Träger; Kunihiko Washio; Alberto Pique; Xianfan Xu; Tatsuo Okada, Editor(s)

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