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Proceedings Paper

Scribing of thin sapphire substrates with a 266-nm Q-switched solid state laser
Author(s): Edward C. Rea Jr.
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Paper Abstract

Thin sections of single-crystal sapphire are favored as substrates for the epitaxial deposition of gallium nitride and other III-V and II-VI thin films used in the fabrication of electro-optic devices such as blue-green LEDs and laser diodes. Due to difficulties commonly encountered in cutting this hard material, alternatives to traditional mechanical processing techniques are of particular interest. This paper reviews a recent study characterizing the scribing of sapphire using the tightly focused output of an ultraviolet wavelength pulsed solid-state laser.

Paper Details

Date Published: 15 July 2004
PDF: 10 pages
Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); doi: 10.1117/12.529613
Show Author Affiliations
Edward C. Rea Jr., Coherent, Inc. (United States)

Published in SPIE Proceedings Vol. 5339:
Photon Processing in Microelectronics and Photonics III
Jan J. Dubowski; Peter R. Herman; Friedrich G. Bachmann; Willem Hoving; Jim Fieret; David B. Geohegan; Frank Träger; Kunihiko Washio; Alberto Pique; Xianfan Xu; Tatsuo Okada, Editor(s)

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