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Proceedings Paper

Temperature dependence of photoluminescence in noncrystalline silicon
Author(s): Ali Serpenguzel; Temel Bilici; Ibrahim Inanc; Adnan Kurt; Jim Carey; Eric Mazur
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Paper Abstract

Crystalline silicon being ubiquitous throughout the microelectronics industry has an indirect bandgap, and therefore is incapable of light emission. However, strong room temperature visible and near-IR luminescence from non-crystalline silicon, e.g., amorphous silicon, porous silicon, and black silicon, has been observed. These silicon based materials are morphologically similar to each other, and have similar luminescence properties. We have studied the temperature dependence of the photoluminescence from these non-crystalline silicons to fully characterize and optimize these materials in the pursuit of obtaining novel optoelectronic devices.

Paper Details

Date Published: 18 June 2004
PDF: 9 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529549
Show Author Affiliations
Ali Serpenguzel, Koc Univ. (Turkey)
Temel Bilici, Koc Univ. (Turkey)
Ibrahim Inanc, Koc Univ. (Turkey)
Adnan Kurt, Koc Univ. (Turkey)
Jim Carey, Harvard Univ. (United States)
Eric Mazur, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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