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Proceedings Paper

Effect of oxygen on the electronic band structure of II-O-VI alloys
Author(s): W. Shan; W. Walukiewicz; Kin Man Yu; Joel W. Ager; Junqiao Wu; Jeffrey W. Beeman; M. A. Scapulla; O. D. Dubon; Eugene E. Haller; Y. Nabetani; Piotr Becla
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Paper Abstract

We have studied the effects of composition and hydrostatic pressure on the direct optical transitions at the Γ point of the Brillouin zone in MBE-grown ZnOxSe1-x and ion-implantation-synthesized Zn1-yMnyOxTe1-x alloys. We observe a large O-induced band-gap reduction and a change in the pressure dependence of the fundamental band gap of the II-O-VI alloys. The effects are similar to those previously observed and extensively studied in highly mismatched III-N-V alloys. Our results are well explained in terms of the band anticrossing model that considers an anticrossing interaction between the highly localized oxygen states and the extended states of the conduction band of II-VI compounds. The O-induced modification of the conduction band structure offers an interesting possibility of using small amounts of O to engineer the optoelectronics properties of group II-O-VI alloys.

Paper Details

Date Published: 18 June 2004
PDF: 9 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529297
Show Author Affiliations
W. Shan, Lawrence Berkeley National Lab. (United States)
W. Walukiewicz, Lawrence Berkeley National Lab. (United States)
Kin Man Yu, Lawrence Berkeley National Lab. (United States)
Joel W. Ager, Lawrence Berkeley National Lab. (United States)
Junqiao Wu, Lawrence Berkeley National Lab. (United States)
Jeffrey W. Beeman, Lawrence Berkeley National Lab. (United States)
M. A. Scapulla, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)
O. D. Dubon, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)
Eugene E. Haller, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)
Y. Nabetani, Univ. of Yamanashi (Japan)
Piotr Becla, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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