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Proceedings Paper

Color-dependent degradation of high-brightness AlGaInP LEDs
Author(s): Paola Altieri; Arndt Jaeger; Reiner Windisch; Norbert Linder; Peter Stauss; Raimund Oberschmid; Klaus Streubel
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Paper Abstract

Operation-induced degradation of internal quantum efficiency of high-brightness (AlxGa1-x)0.5In0.5P light-emitting devices (LEDs) is analysed experimentally and theoretically. A test series of LEDs was grown by MOCVD with identical layer sequence but different Aluminum content x in the active AlGaInP layer resulting in devices emitting light between 644 nm and 560 nm. The analysis yields the wavelength dependence of both the nonradiative recombination constant A as well as the carrier leakage parameter C of devices before and after aging. While test devices with λ>615 nm are very stable, LEDs with shorter emission wavelengths exhibit both an increase of A and a slight decrease of C upon aging. Possible degradation mechanisms are discussed.

Paper Details

Date Published: 18 June 2004
PDF: 10 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529209
Show Author Affiliations
Paola Altieri, OSRAM Opto Semiconductors GmbH (Germany)
Arndt Jaeger, OSRAM Opto Semiconductors GmbH (Germany)
Reiner Windisch, OSRAM Opto Semiconductors GmbH (Germany)
Norbert Linder, OSRAM Opto Semiconductors GmbH (Germany)
Peter Stauss, OSRAM Opto Semiconductors GmbH (Germany)
Raimund Oberschmid, OSRAM Opto Semiconductors GmbH (Germany)
Klaus Streubel, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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