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Proceedings Paper

Intracavity modulation of THz p-Ge laser gain by interband optical excitation
Author(s): Chris J. Fredricksen; Andrei V. Muravjov; Robert E. Peale
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Paper Abstract

Optical quenching of the THz inter-sub-band p-Ge laser (tunable in the wavelength range 70-200 micron with ~1W output power) by Nd:YAG laser radiation has been investigated. YAG laser pulses were coupled into a p-Ge laser cavity through a SrTiO3 laser mirror, which is highly reflecting at cryogenic temperatures for THz frequencies and transparent for visible and near-IR light. Fast quenching of the p-Ge laser emission intensity was observed and attributed to free carrier absorption by optically generated electron-hole pairs in a thin layer of the active p-Ge crystal end surface. The effect also occurs when the interband absorption is confined to optically stimulated intracavity Si or GaAs spacers, which are transparent in the far-IR, placed between the SrTiO3 laser mirror and the active crystal end face. Such fast quenching of the p-Ge laser might be used to sharpen the trailing edge of the far-IR emission pulse for time-resolved or cavity-ring-down spectroscopic applications. Direct-gap semiconductor spacers might be used as fast, optically controlled intracavity modulators for active mode-locking.

Paper Details

Date Published: 8 July 2004
PDF: 8 pages
Proc. SPIE 5332, Solid State Lasers XIII: Technology and Devices, (8 July 2004); doi: 10.1117/12.529080
Show Author Affiliations
Chris J. Fredricksen, Zaubertek, Inc. (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5332:
Solid State Lasers XIII: Technology and Devices
Richard Scheps; Hanna J. Hoffman, Editor(s)

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