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Proceedings Paper

Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AIAs superlattices
Author(s): Xiaodong Mu; Yujie J. Ding; Zhiming Wang; Gregory J. Salamo
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Paper Abstract

We demonstrate that longitudinal-optical (LO) phonons efficiently pump electrons from the quasi-X states to the quasi-Γ states in short-period type-II GaAs/AlAs superlattices. At a very low temperature, the phonon-assisted electron up-transfer can occur if the energy difference between the lowest quasi-Γ states and quasi-X states is equal to or less than the LO phonon energies. As the temperature increases, however, kinetic energies of the electrons can facilitate the electron up-transfer. As a result, we have observed peculiar behaviors on these superlattices. First, photoluminescence intensity for the quasi-direct transition drastically increases as the temperature or pump power increases. Second, the dependence of the integrated photoluminescence intensity on the pump power exhibits a square power law.

Paper Details

Date Published: 16 June 2004
PDF: 8 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.529066
Show Author Affiliations
Xiaodong Mu, Lehigh Univ. (United States)
Yujie J. Ding, Lehigh Univ. (United States)
Zhiming Wang, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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