Proceedings Paper
Materials and structural design of a mid-infrared light-emitting device| Format | Member Price | Non-Member Price |
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Paper Abstract
An optically pumped emitter for the mid-infrared region around 4 µm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow ap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.
Paper Details
Date Published: 21 June 2004
PDF: 9 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.528899
Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)
PDF: 9 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.528899
Show Author Affiliations
Fritz Weik, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Jens W. Tomm, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Regine Glatthaar, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Uwe Vetter, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Dirk Szewczyk, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Joachim Nurnus, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Jens W. Tomm, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Regine Glatthaar, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Uwe Vetter, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Dirk Szewczyk, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Joachim Nurnus, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Armin Lambrecht, Fraunhofer-Institut fur Physikalische Messtechnik (Germany)
Markus Grau, Technische Univ. Muenchen (Germany)
Ralf Meyer, Technische Univ. Muenchen (Germany)
Markus C. Amann, Technische Univ. Muenchen (Germany)
Bernd Spellenberg, Thermosensorik GmbH (Germany)
Michael Bassler, Thermosensorik GmbH (Germany)
Markus Grau, Technische Univ. Muenchen (Germany)
Ralf Meyer, Technische Univ. Muenchen (Germany)
Markus C. Amann, Technische Univ. Muenchen (Germany)
Bernd Spellenberg, Thermosensorik GmbH (Germany)
Michael Bassler, Thermosensorik GmbH (Germany)
Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)
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