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Proceedings Paper

3.0-mW GaInNAs long-wavelength vertical-cavity surface-emitting laser grown by metalorganic chemical vapor deposition
Author(s): Tetsuo Nishida; Mitsuru Takaya; Satoshi Kakinuma; Takeo Kaneko; Tatsuya Shimoda
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Paper Abstract

We have optimized the doping levels in distributed Bragg reflectors (DBRs) and GaInNAs/GaAs quantum well (QW) structures in order to enhance their optical output power. We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1260nm. The continuous wave (CW) output power of the devices reached 3.0mW at room temperature, with a slope efficiency of 0.28W/A. The devices consisted of conventional n-type and ptype doped DBRs with GaInNAs/GaAs 3QWs, and they were grown by metalorganic chemical vapor deposition (MOCVD).

Paper Details

Date Published: 16 June 2004
PDF: 8 pages
Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.528771
Show Author Affiliations
Tetsuo Nishida, Seiko Epson Corp. (Japan)
Mitsuru Takaya, Seiko Epson Corp. (Japan)
Satoshi Kakinuma, Seiko Epson Corp. (Japan)
Takeo Kaneko, Seiko Epson Corp. (Japan)
Tatsuya Shimoda, Seiko Epson Corp. (Japan)

Published in SPIE Proceedings Vol. 5364:
Vertical-Cavity Surface-Emitting Lasers VIII
Chun Lei; Kent D. Choquette; Sean P. Kilcoyne, Editor(s)

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