Share Email Print
cover

Proceedings Paper

Effect of donors and acceptors on the optical properties of CdGeAs2
Author(s): Lihua Bai; Nelson Y. Garces; Chunchuan Xu; Larry E. Halliburton; Nancy C. Giles; Peter G. Schunemann; Kosuke Nagashio; Chunhui Yang; Robert S. Feigelson
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

CdGeAs2 is an important nonlinear optical infrared material. Room-temperature absorption and temperature-dependent photoluminescence (PL) of as-grown p-type bulk crystals and crystals doped with indium and tellurium have been measured. The intensity of an intervalence band absorption near 5.5 microns (0.225 eV) is correlated with the intensity of a PL band near 0.55 eV. Both of these optical features indicate the presence of a native shallow acceptor level at 120 meV above the top valence band. The 0.55-eV PL band is donor-acceptor-pair recombination between shallow donors and the shallow acceptor level. A second PL band peaking near 0.35 eV is donor-acceptor-pair recombination between shallow donors and a deeper acceptor at 300 meV above the top valence band. Doping with indium and tellurium produces n-type material. The intervalence band absorption at 5.5 microns is completely eliminated in the n-type samples. Indium donors are incorporated on the Cd site and Te donors are incorporated on the As site.

Paper Details

Date Published: 14 June 2004
PDF: 8 pages
Proc. SPIE 5337, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III, (14 June 2004); doi: 10.1117/12.528547
Show Author Affiliations
Lihua Bai, West Virginia Univ. (United States)
Nelson Y. Garces, West Virginia Univ. (United States)
Chunchuan Xu, West Virginia Univ. (United States)
Larry E. Halliburton, West Virginia Univ. (United States)
Nancy C. Giles, West Virginia Univ. (United States)
Peter G. Schunemann, BAE SYSTEMS (United States)
Kosuke Nagashio, Stanford Univ. (United States)
Chunhui Yang, Stanford Univ. (United States)
Robert S. Feigelson, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 5337:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III
Kenneth L. Schepler; Dennis D. Lowenthal, Editor(s)

© SPIE. Terms of Use
Back to Top