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Proceedings Paper

Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements
Author(s): Alexander O. Goushcha; Richard A. Metzler; Chris Hicks; Valery N. Kharkyanen; Natalja M. Berezetska
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Paper Abstract

We present the results of our studies of the quantum efficiency of Si photodiode close to the bandgap and some factors influencing Si photodiode sensitivity. To calculate the carrier collection efficiency function P(x), we used a corrected, explicit expression that takes into account the rear surface reflection of the light [1]. The method of calculation involves solution of the integral equation and allows determination of the carrier collection efficiency function with a high precision. We show that the exact integral equation for P(x) could be often, but not always replaced with the approximations similar to those proposed previously in [2,3]. However, employing the method proposed in this work allows quantifying such factors as e.g. the reflectance of the rear surface of the die and optical scattering within the diffusion layer, which is vital in designing highly efficient Si photodiodes in the near infrared spectral range. 1. C. Hicks, M. Kalatsky, R.A. Metzler, and A.O. Goushcha. Applied Optics, Vol. 42, No. 22. In press 2. L. Werner, J. Fischer, U. Johannsen and J. Hartmann, Metrologia 37, 279-284 (2000). 3. T.R. Gentile, J.M. Houston, and C.L. Cromer, Appl. Opt. 35, 4392-4403 (1996).

Paper Details

Date Published: 8 June 2004
PDF: 8 pages
Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.528361
Show Author Affiliations
Alexander O. Goushcha, Semicoa (United States)
Richard A. Metzler, Semicoa (United States)
Chris Hicks, Semicoa (United States)
Valery N. Kharkyanen, National Academy of Science (Ukraine)
Natalja M. Berezetska, National Academy of Science (Ukraine)

Published in SPIE Proceedings Vol. 5353:
Semiconductor Photodetectors
Kurt J. Linden; Eustace L. Dereniak, Editor(s)

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