Share Email Print

Proceedings Paper

Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up
Author(s): Aland K. Chin; Zuntu Xu; Kejian Luo; Lisen Cheng; Al Nelson; Wei Gao
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Reliable, high-power, single-mode, GaAlAs/GaAs, laser-diodes in the spectral region of 780 - 900 nm have been designed with procedures developed for telecom-grade, 980 nm, InGaAs/GaAlAs/GaAs pump diodes. Fifteen 808 nm, single-mode laser-diodes, mounted epitaxial-side up onto AlN submounts with eutectic Au80Sn20 solder, have been operated reliably for 3500 hours at 150 mW.

Paper Details

Date Published: 1 June 2004
PDF: 7 pages
Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004); doi: 10.1117/12.528342
Show Author Affiliations
Aland K. Chin, Axcel Photonics, Inc. (United States)
Zuntu Xu, Axcel Photonics, Inc. (United States)
Kejian Luo, Axcel Photonics, Inc. (United States)
Lisen Cheng, Axcel Photonics, Inc. (United States)
Al Nelson, Axcel Photonics, Inc. (United States)
Wei Gao, Axcel Photonics, Inc. (United States)

Published in SPIE Proceedings Vol. 5336:
High-Power Diode Laser Technology and Applications II
Mark S. Zediker, Editor(s)

© SPIE. Terms of Use
Back to Top