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Proceedings Paper

Electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy
Author(s): W. Liang; Kong-Thon Tsen; David K. Ferry
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Paper Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Paper Details

Date Published: 16 June 2004
PDF: 10 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.528339
Show Author Affiliations
W. Liang, Arizona State Univ. (United States)
Kong-Thon Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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