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Proceedings Paper

Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure
Author(s): Zuntu Xu; Wei Gao; Brad Siskavich; Alan Nelson; Lisen Cheng; Kejian Luo; Hyo Sang Kim; Zhiping Wang; Aland K. Chin
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Paper Abstract

We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.

Paper Details

Date Published: 11 May 2004
PDF: 6 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.528329
Show Author Affiliations
Zuntu Xu, Axcel Photonics, Inc. (United States)
Wei Gao, Axcel Photonics, Inc. (United States)
Brad Siskavich, Axcel Photonics, Inc. (United States)
Alan Nelson, Axcel Photonics, Inc. (United States)
Lisen Cheng, Axcel Photonics, Inc. (United States)
Kejian Luo, Axcel Photonics, Inc. (United States)
Hyo Sang Kim, Axcel Photonics, Inc. (United States)
Zhiping Wang, Axcel Photonics, Inc. (United States)
Aland K. Chin, Axcel Photonics, Inc. (United States)


Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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