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Proceedings Paper

Characteristics of InGa(N)As VCSELs for fiber optic applications
Author(s): Hung-Pin D. Yang; Chen-Ming Lu; Ru-Shang Hsiao; Chih-Hung Chiou; Cheng-Hung Lee; Chun-Yuan Huang; Hsin-Chieh Yu; Chin-May Wang; Kuen Fong Lin; Chih-Ming Lai; Li-Chung Wei; Nikolay A. Maleev; Alexey R. Kovsh; Chia-Pin Sung; Jyh-Shyang Wang; Jenn-Fang Chen; Tsin-Dong Lee; Jim Y. Chi
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Paper Abstract

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As0.98/GaAs VCSELs with 1mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.

Paper Details

Date Published: 16 June 2004
PDF: 8 pages
Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); doi: 10.1117/12.528157
Show Author Affiliations
Hung-Pin D. Yang, Industrial Technology Research Institute (Taiwan)
Chen-Ming Lu, Industrial Technology Research Institute (Taiwan)
Ru-Shang Hsiao, Industrial Technology Research Institute (Taiwan)
National Chiao Tung Univ. (Taiwan)
Chih-Hung Chiou, Industrial Technology Research Institute (Taiwan)
Cheng-Hung Lee, Industrial Technology Research Institute (Taiwan)
Chun-Yuan Huang, Industrial Technology Research Institute (Taiwan)
Hsin-Chieh Yu, Industrial Technology Research Institute (Taiwan)
National Cheng Kung Univ. (Taiwan)
Chin-May Wang, Industrial Technology Research Institute (Taiwan)
Kuen Fong Lin, Industrial Technology Research Institute (Taiwan)
Chih-Ming Lai, Industrial Technology Research Institute (Taiwan)
Li-Chung Wei, Industrial Technology Research Institute (Taiwan)
Nikolay A. Maleev, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Chia-Pin Sung, Industrial Technology Research Institute (Taiwan)
Jyh-Shyang Wang, Industrial Technology Research Institute (Taiwan)
Jenn-Fang Chen, National Chiao Tung Univ. (Taiwan)
Tsin-Dong Lee, Industrial Technology Research Institute (Taiwan)
Jim Y. Chi, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 5364:
Vertical-Cavity Surface-Emitting Lasers VIII
Chun Lei; Kent D. Choquette; Sean P. Kilcoyne, Editor(s)

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